Int. J. of Applied Mathematics, Computational Science and Systems Engineering

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A 2.4-GHz LNA: Design, Simulation, and Comparison in 0.2-μm GaAs p-HEMT Process and 0.35-μm SiGe BiCMOS HBT Process

Author(s): Farshad Eshghabadi, Fatemeh Banitorfian, Massoud Dousti, Norlaili Mohd Noh

Abstract: An LNA design and simulation using ED02AH Technology in 0.2-μm GaAs Pseudomorphic HEMT process and 0.35-μm HBT SiGe BiCMOS process are reported as a case of comparison. This work uses an identical circuit topology for both processes which is a 3-volt two stage cascode single-ended topology with a resistive shunt feedback. This LNA is developed for 2.4 GHz ISM band applications. This letter describes the differences of the achieved specifications such as gain, noise figure, impedance matching, third-order intercept point, linearity, and power consumption using these processes.

Keywords: MMIC; GaAs; ED02AH; pHEMT; SiGe; BiCMOS; HBT; LNA; comparison

Pages: 85-88

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